si2302 n-channel enhancement mode field effect transistor features ? 20v,3.0a, r ds(on) =55m @v gs =4.5v r ds(on) =82m @v gs =2.5v ? high dense cell design for extremely low r ds(on) ? rugged and reliable ? lead free product is acquired ? sot-23 package ? marking code: s2 maximum ratings @ 25 o c unless otherwise specified symbol parameter rating unit v ds drain-source voltage 20 v i d drain current-continuous 3 a i dm drain current-pulsed a 10 a v gs gate-source voltage 8 v p d total power dissipation 1.25 w r ja thermal resistance junction to ambient b 100 /w t j operating junction temperature -55 to +150 t stg storage temperature -55 to +150 internal block diagram micro commercial components mcc tm
omp onents 20736 marilla street chatsworth
revision: a 2011 /01/01 www. mccsemi .com 1 of 5 sot-23 suggested solder pad layout dimensions inches mm dim min max min max note a .110 .120 2.80 3.04 b .083 .098 2.10 2.64 c .047 .055 1.20 1.40 d .035 .041 .89 1.03 e .070 .081 1.78 2.05 f .018 .024 .45 .60 g .0005 .0039 .013 .100 h .035 .044 .89 1.12 j .003 .007 .085 .180 k .015 .020 .37 .51 a b c d e f g h j .079 2.000 in c h es mm . 03 1 .800 .035 .900 .037 .950 .037 .950 k s g d s g d s g d s g d 2 3 1 1.gate 2. source 3. drain epoxy meets ul 94 v-0 flammability rating moisture sensitivity level 1
si2302 micro commercial components mcc tm revision: a 2011/01/01 www. mccsemi .com 2 of 5 electrical characteristics t a = 25 c unless otherwise noted parameter symbol min units off characteristics drain-source breakdown voltage zero gate voltage drain current gate body leakage current, forward forwand transconductance gate threshold voltage static drain-source on-resistance bv dss i dss i gssr i gssf 72 55 0.65 1.2 -100 100 1 m v na na a v s gate body leakage current, reverse on characteristics c dynamic characteristics d input capacitance reverse transfer capacitance output capacitance switching characteristics d turn-on delay time turn-on fall time turn-off delay time turn-on rise time total gate charge gate-source charge gate-drain charge drain-source diode characteristics and maximun ratings drain-source diode forward current b drain-source diode forward voltage c test condition v gs =0v,i d =10 a v gs(th) r ds(on) g fs c iss c oss c rss t d(on) t r t d(off) t f q g q gs q gd i s v sd typ max 20 v ds = 20v, v gs =0v v gs =8v,v ds =0v v gs = -8v, v ds =0v v gs =v ds ,i d =50 a v gs = 4.5v, i d = 3.6a v gs = 2.5v, i d = 3.1a v ds =5v,i d = 3.6a v dd = 10v, i d = 3.6a, v gs = 4.5v, r gen =6 v ds = 10v, i d = 3.6a, v gs = 4.5v v ds = 10v, v gs =0v, f = 1.0 mhz v gs =0v,i s = 0.94a 237 120 45 23 11 34 36 45 30 70 70 6 1.4 1.8 10 0.94 1.2 8.5 110 82 m pf pf pf ns ns ns ns nc nc nc a v notes : a.repetitive rating : pulse width limited by maximum junction temperature. b.surface mounted on fr4 board ,t<10 sec. c.pulse test : pulse width < 300s, duty cycle < 2%. d.guaranteed by design, not subject to production testing.
micro commercial components mcc tm revision: a 2011/01/01 www. mccsemi .com 3 of 5 c, capacitance (pf) i d , drain current (a) c iss c oss c rss 600 500 400 300 200 100 0 0510152025 i d , drain current (a) r ds(on), normalized r ds(on) , on-resistance(ohms) v ds , drain-to-source voltage (v) figure 1. output characteristics v gs , gate-to-source voltage (v) figure 2. transfer characteristics v ds , drain-to-source voltage (v) figure 3. capacitance t j , junction temperature( c) figure 4. on-resistance variation with temperature 2.2 1.9 1.6 1.3 1.0 0.7 0.4 v gs =4.5v i d =3.6a -100 -50 0 50 100 150 200 v th , normalized gate-source threshold voltage t j , junction temperature( c) figure 5. gate threshold variation with temperature 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 v ds =v gs i d =250a -50 -25 0 25 50 75 100 125 150 i s , source-drain current (a) v sd , body diode forward voltage (v) figure 6. body diode forward voltage variation with source current 10 0 10 1 0.2 0.4 0.6 0.8 10 -1 1.2 1.0 v gs =0v 10 8 6 4 2 0 012 5 34 v gs =2.0v v gs =4.5,3.5,2.5v v gs =1.5v 10 8 6 4 2 0 01 2 3 t j =125 c -55 c 25 c si2302
si2302 micro commercial components mcc tm revision:a 2011 /01/01 www. mccsemi .com 4 of 5 v gs , gate to source voltage (v) qg, total gate charge (nc) figure 7. gate charge v ds , drain-source voltage (v) figure 8. maximum safe operating area i d , drain current (a) figure 9. switching test circuit figure 10. switching waveforms t v v t t d(on) out in on r 10% t d(off) 90% 10% 10% 50% 50% 90% t off t f 90% pulse width inverted v dd r d v v r s v g gs in gen out l r(t),normalized effective transient thermal impedance square wave pulse duration (sec) figure 11. normalized thermal transient impedance curve 10 -2 10 -4 p dm t 1 t 2 1. r ja (t)=r (t) * r ja 2. r ja =see datasheet 3. t jm- t a =p*r ja (t) 4. duty cycle, d=t1/t2 10 0 single pulse 10 -1 10 1 10 2 10 0 10 -1 10 -2 10 -3 0.02 0.05 0.1 0.2 d=0.5 5 4 3 2 1 0 0246 v ds =10v i d =3.6a 10 1 10 0 10 -1 10 1 10 0 10 -1 10 2 10 -2 1s 100ms 10ms dc 1ms r ds(on) limit single pulse t a =25 c t j =150 c
mcc revision: a 2011/01/01 tm micro commercial components www. mccsemi .com 5 of 5 device packing part number-tp tape&reel: 3kpcs/reel ordering information : *** i m p o r t a n t n o t ic e * ** m i c r o c o m m e r c i a l c o m p on e n ts c o r p . r e s e rve s t h e r i g h t t o m a k e c h a n g e s w i t ho u t f u r t h e r no t i c e t o a n y p r o d u c t h e r e i n t o m a k e c o rr e c t i o n s , m o d i f i c a t i o n s , e n h a n c e m e n t s , i m pr o v e m e n t s , o r o t h e r ch a n g e s . m i c r o c o m m e r c i a l c o mp o n e n ts c o r p . d o e s n o t a s s u m e a n y l i a b i l i t y a r i s i n g ou t o f t h e a p p l i c a t i on o r u s e o f a n y p r o d uc t d e sc r i be d h e r e i n ; n e i t h e r d o e s i t c o n v e y a n y li c e n s e un der i t s p a t e n t r i g h t s , n o r t h e r i g h t s o f o t h e r s . t h e u s e r o f pr o d uc t s i n s u c h a p p l i c a t i o n s sh a l l a ss u m e a l l r i s k s o f su c h u s e a n d w ill a g r ee t o h o l d m i c r o c o mm er c i a l c o m p o n e n t s c o r p . a n d a ll t h e c o m p a n i e s w ho s e p r o d u c t s a r e r e p r e s e n t ed o n ou r w e b s i t e , h a r m l e s s a g a i n s t a l l d a m a g e s. * * * l i f e s u p p o r t *** m c c ' s pr o d uc t s a r e n o t a u t h o r iz ed f o r u s e a s c r i t i c a l c o m p o n e n t s i n l i f e s u pp o r t d e v i c e s o r s y s t e m s w i t h ou t t h e e x pre ss wr i tt e n a p p r o v a l o f m i c r o c o mm e r c i a l c o m p o n e n t s c o rp o r a t i o n. * * * c u s t o m e r a w a r e n e ss*** c o un t e r f e i t i n g o f s e m i c o n d u c t o r p a r t s i s a gr o w i n g p r o b l e m i n t h e i n d u s t ry . m i c r o c o mm e r c i a l c o m p o n e n t s ( m cc ) i s t a k i n g s t r o n g m e a su r e s t o p r o t e c t ou r s e l v e s a n d o u r cu s t o m e r s f r o m t h e pr o l i f e r a t i on o f c o u n t e r f e i t p a r t s . m c c s t r o n g l y e nc o u r a g e s c u s t o m e r s t o p u r c h a s e m c c p a r t s e i t h e r d i r e c t l y f r o m m c c o r f r o m a u t ho r i z e d m c c d i s t r i b u t o r s w ho a r e l i s t e d b y c o u n t r y o n o u r w e b p a g e c i t ed below . p r o d uc t s c us t o m e r s b u y e i t h e r f r o m m c c d i r e c t l y o r f r o m a u t ho r i z e d m cc d i s t r i b u t o r s a r e g e n u i n e p a r t s , h a v e f ul l t r a c e a b il i t y , m e e t m c c ' s q u a l i t y s t a n d a r d s f o r h a n d li n g a n d s t o r a g e . m c c wi l l n o t p r o v i d e a n y w a rr a n ty c o v e r a g e o r o t h e r a s s i s t a n c e f o r p a r ts b o u g h t f r o m u n a u t h o r i z e d s o u r c e s. m c c i s c o m m i t t e d t o c o m b a t t h i s g l o b a l pr o b l e m a n d e n c ou r a g e o u r c u s t o m e r s t o d o t h e i r p a r t in s t o p p i n g t h i s p r a c t i c e b y b u y i n g d i r e c t o r f r o m a u t h o r i z ed d i s t r i b u t o r s.
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